Organic Thin-Film Transistor from a Pentacene Photoprecursor

被引:31
|
作者
Masumoto, Akane [1 ]
Yamashita, Yuko [2 ]
Go, Shintetsu [3 ]
Kikuchi, Toshihiro [3 ]
Yamada, Hiroko [2 ,4 ]
Okujima, Tetsuo [2 ]
Ono, Noboru [2 ]
Uno, Hidemitsu [5 ,6 ]
机构
[1] Canon Inc, OD Dev Ctr, Tokyo 1468501, Japan
[2] Ehime Univ, Dept Chem, Fac Sci, Matsuyama, Ehime 7908577, Japan
[3] Canon Inc, Mat Technol Dev Ctr, Tokyo 1468501, Japan
[4] PRESTO JST, Kawaguchi, Saitama 3320012, Japan
[5] Ehime Univ, Integrated Ctr Sci, Matsuyama, Ehime 7908577, Japan
[6] CREST JST, Matsuyama, Ehime 7908577, Japan
关键词
FIELD-EFFECT TRANSISTOR; SOLUBLE PENTACENE; HIGH-PERFORMANCE; PRECURSOR; MOBILITY; SEMICONDUCTORS; DERIVATIVES; CRYSTAL; DIELECTRICS; MORPHOLOGY;
D O I
10.1143/JJAP.48.051505
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic thin-film transistors were successfully fabricated by the spin-coating method using a photo-precursor of pentacene, 6,13-dihydro-6,13-ethanopentacene-15,16-dione. After spin coating the soluble precursor, irradiation with visible light gave a pentacene film. A good mobility of 0.34 cm(2) V(-1) s(-1) and a high on/off ratio of 2.0 x 10(6) were achieved by treatment of the insulator surface with methyl silsesquioxane and by deposition of pentacene from the precursor with visible light irradiation (>300 nm) and mild heat treatment (110-120 degrees C). In this case, small grains of pentacene crystals existed in the loosely ordered pentacene mesophase, in which pentacene molecules aligned vertically. Not only the grains of pentacene crystals but also the loosely packed pentacene phase played an important role in the field-effect transistor (FET) performance. (C) 2009 The Japan Society of Applied Physics
引用
收藏
页码:0515051 / 0515055
页数:5
相关论文
共 50 条
  • [21] Organic passivation layers for pentacene organic thin-film transistors
    Lee, Ho Nyeon
    Lee, Young Gu
    Ko, Ik Hwan
    Hwang, Eok Chai
    Kang, Sung Kee
    [J]. CURRENT APPLIED PHYSICS, 2008, 8 (05) : 626 - 630
  • [22] Pentacene-based organic thin-film transistors
    Lin, YY
    Gundlach, DJ
    Nelson, SF
    Jackson, TN
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (08) : 1325 - 1331
  • [23] A pentacene-based organic thin film memory transistor
    Mabrook, Mohammed F.
    Yun, Youngjun
    Pearson, Christopher
    Zeze, Dagou A.
    Petty, Michael C.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (17)
  • [24] Potential imaging of pentacene organic thin-film transistors
    Nichols, JA
    Gundlach, DJ
    Jackson, TN
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (12) : 2366 - 2368
  • [25] Transfer patterning of pentacene for organic thin-film transistors
    Park, S. Young
    Kwon, Taegeun
    Lee, Hong H.
    [J]. ADVANCED MATERIALS, 2006, 18 (14) : 1861 - +
  • [26] Flexible organic LED and organic thin-film transistor
    Zyung, T
    Kim, SH
    Chu, HY
    Lee, JH
    Lim, SC
    Lee, JI
    Oh, J
    [J]. PROCEEDINGS OF THE IEEE, 2005, 93 (07) : 1265 - 1272
  • [27] Geometric effect of channel on device performance in pentacene thin-film transistor
    Kang, SJ
    Noh, M
    Park, DS
    Kim, HJ
    Kim, SY
    Koo, BW
    Kang, IN
    Whang, CN
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11A): : 7718 - 7721
  • [28] Ambipolar thin-film field-effect transistor based on pentacene
    Wang, W
    Shi, JW
    Liang, C
    Zhang, HM
    Liu, MD
    Quan, BF
    Guo, SX
    Fang, JF
    Ma, DG
    [J]. CHINESE PHYSICS LETTERS, 2005, 22 (02) : 496 - 498
  • [29] Working Principle of Hydrogen Sensor Based on Pentacene Thin-Film Transistor
    Li, Bochang
    Lai, P. T.
    Tang, W. M.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (08) : 1132 - 1135
  • [30] Printing organic thin-film transistor technology
    Lee, CC
    Ho, JC
    Hu, TS
    Wang, YW
    [J]. 2005 IEEE VLSI-TSA INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY (VLSI-TSA-TECH), PROCEEDINGS OF TECHNICAL PAPERS, 2005, : 49 - 52