Pentacene organic thin-film transistors for circuit and display applications

被引:237
|
作者
Klauk, H [1 ]
Gundlach, DJ
Nichols, JA
Jackson, TN
机构
[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16802 USA
[2] Penn State Univ, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA
关键词
D O I
10.1109/16.766895
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm(2)/V-s, on/off current ratio as large as 10(8), and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates.
引用
收藏
页码:1258 / 1263
页数:6
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