High temperature performance of AlGaN/GaN HEMTs on Si substrates

被引：103

作者：

Tan, W. S.

Uren, M. J.

Fry, P. W.

Houston, P. A.

Balmer, R. S.

Martin, T.

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] QinetiQ, Malvern WR14 3PS, Worcs, England

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 03期

关键词：

galium nitride; heterostructure field-effect transistors; Si substrates; high temperature;

D O I：

10.1016/j.sse.2006.02.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The DC characteristics of AlGaN/GaN HFETs on Si substrates are reported as a function of temperature and gate length. Stable operation up to 500 degrees C was obtained with no significant permanent degradation. The temperature dependence of the saturation current was found to follow a power law of T-1.5 for long channel devices, but improved to show only a weak T-0.5 dependence for submicron gate length devices. (c) 2006 Elsevier Ltd. All rights reserved.

引用

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页码：511 / 513

页数：3

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