High temperature performance of AlGaN/GaN HEMTs on Si substrates

被引：103
|
作者：
Tan, W. S.
Uren, M. J.
Fry, P. W.
Houston, P. A.
Balmer, R. S.
Martin, T.
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[2] QinetiQ, Malvern WR14 3PS, Worcs, England
来源：
SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 03期
关键词：
galium nitride; heterostructure field-effect transistors; Si substrates; high temperature;
D O I：
10.1016/j.sse.2006.02.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC characteristics of AlGaN/GaN HFETs on Si substrates are reported as a function of temperature and gate length. Stable operation up to 500 degrees C was obtained with no significant permanent degradation. The temperature dependence of the saturation current was found to follow a power law of T-1.5 for long channel devices, but improved to show only a weak T-0.5 dependence for submicron gate length devices. (c) 2006 Elsevier Ltd. All rights reserved.
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页码：511 / 513
页数：3
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