Temperature dependence of high-frequency performances of AlGaN/GaN HEMTs

被引：0
|
作者：
Akita, M [1 ]
Kishimoto, K [1 ]
Mizutani, T [1 ]
机构：
[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 188卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200111)188:1<207::AID-PSSA207>3.0.CO;2-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-frequency measurements of AlGaN/GaN HEMTs (high electron mobility transistors) with 1.3 mum long gate have been performed at temperatures between 23 and 187 degreesC. The cut-off frequency f(T) decreased monotonically with increasing temperature. It was 13.7 and 8.7 GHz at 23 and 187 degreesC, respectively. The effective electron velocities v(eff) in the channel, evaluated from the relation of total delay time versus the I-D-inverse, were 1.2 x 10(7) and 0.8 x 10(7) cm/s at 23 and 187 degreesC respectively. It has been shown that the present device is in an intermediate state between mobility-dominant and peak-velocity-dominant operations.
引用
收藏
页码：207 / 211
页数：5
相关论文
共 50 条
  • [1] High-frequency measurements of AlGaN/GaN HEMTs at high temperatures
    Akita, M
    Kishimoto, S
    Mizutani, T
    [J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) : 376 - 377
  • [2] Temperature-dependent high-frequency performance of deep submicron AlGaN/GaN HEMTs
    Cuerdo, R.
    Pei, Y.
    Recht, F.
    Fichtenbaum, N.
    Keller, S.
    Denbaars, S. P.
    Calle, F.
    Mishra, U. K.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 2994 - +
  • [3] High-frequency conductivity and temperature dependence of electron effective mass in AlGaN/GaN heterostructures
    Korotyeyev, Vadym V.
    Kochelap, Vyacheslav A.
    Kaliuzhnyi, Vladyslav V.
    Belyaev, Alexander E.
    [J]. APPLIED PHYSICS LETTERS, 2022, 120 (25)
  • [4] Analysis of High-Frequency Behavior of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination
    Chen, Kun-Ming
    Lin, Chuang-Ju
    Nagarajan, Venkatesan
    Chang, Edward Yi
    Lin, Chao-Wen
    Huang, Guo-Wei
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (05)
  • [5] Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs
    Munshi, Mohammad Ateeb
    Mir, Mehak Ashraf
    Malik, Rasik
    Joshi, Vipin
    Chaudhuri, Rajarshi Roy
    Khan, Zubear
    Shrivastava, Mayank
    [J]. 2023 45TH ANNUAL EOS/ESD SYMPOSIUM, EOS/ESD, 2023,
  • [6] High Frequency Noise Model of AlGaN/GaN HEMTs
    Mao, Shuman
    Xu, Yuehang
    Chen, Yongbo
    Fu, Wenli
    Zhao, Xiaodong
    Xu, Ruimin
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (11) : S3072 - S3077
  • [7] Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs
    Heller, Eric
    Choi, Sukwon
    Dorsey, Donald
    Vetury, Ramakrishna
    Graham, Samuel
    [J]. MICROELECTRONICS RELIABILITY, 2013, 53 (06) : 872 - 877
  • [8] Optimization of AlGaN/GaN HEMTs for high frequency operation
    Palacios, T
    Dora, Y
    Chakraborty, A
    Sanabria, C
    Keller, S
    DenBaars, SP
    Mishra, UK
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07): : 1845 - 1850
  • [9] Optimization of AlGaN/GaN HEMTs for high frequency operation
    Palacios, T.
    Dora, Y.
    Chakraborty, A.
    Sanabria, C.
    Keller, S.
    DenBaars, S. P.
    Mishra, U. K.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07):
  • [10] Temperature dependence of drain conductance in ion implanted GaN/AlGaN/GaN HEMTs
    Ohsawa, T.
    Nakejima, M.
    Nomoto, K.
    Satoh, A.
    Nakamura, T.
    [J]. REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS, 2008, (26): : 83 - 86
12345