Temperature dependence of high-frequency performances of AlGaN/GaN HEMTs

被引：0
|
作者：
Akita, M [1 ]
Kishimoto, K [1 ]
Mizutani, T [1 ]
机构：
[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 188卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200111)188:1<207::AID-PSSA207>3.0.CO;2-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-frequency measurements of AlGaN/GaN HEMTs (high electron mobility transistors) with 1.3 mum long gate have been performed at temperatures between 23 and 187 degreesC. The cut-off frequency f(T) decreased monotonically with increasing temperature. It was 13.7 and 8.7 GHz at 23 and 187 degreesC, respectively. The effective electron velocities v(eff) in the channel, evaluated from the relation of total delay time versus the I-D-inverse, were 1.2 x 10(7) and 0.8 x 10(7) cm/s at 23 and 187 degreesC respectively. It has been shown that the present device is in an intermediate state between mobility-dominant and peak-velocity-dominant operations.
引用
收藏
页码：207 / 211
页数：5
相关论文
共 50 条
  • [21] Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs
    Guhel, Y
    Boudart, B
    Hoel, V
    Werquin, M
    Gaquiere, C
    De Jaeger, JC
    Poisson, MA
    Daumiller, I
    Kohn, E
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2002, 34 (01) : 4 - 6
  • [22] Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application
    Lei, Jianming
    Wang, Rui
    Yang, Guo
    Wang, Jin
    Chen, Dunjun
    Lu, Hai
    Zhang, Rong
    Zheng, Youdou
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) : 417 - 424
  • [23] Thermal Study of the High-Frequency Noise in GaN HEMTs
    Thorsell, Mattias
    Andersson, Kristoffer
    Fagerlind, Martin
    Sudow, Mattias
    Nilsson, Per-Ake
    Rorsman, Niklas
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (01) : 19 - 26
  • [24] High-frequency performance of AlGaN channel HEMTs with high breakdown voltage
    Nanjo, T.
    Kurahashi, K.
    Imai, A.
    Suzuki, Y.
    Nakmura, M.
    Suita, M.
    Yagyu, E.
    [J]. ELECTRONICS LETTERS, 2014, 50 (22) : 1577 - 1578
  • [25] High-frequency AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates
    Liu, Yeke
    Li, Cheng-Han
    Hsu, Wen-Ching
    Chuang, Chih-Yuan
    Liu, Jia-Zhe
    Hsu, Shawn S. H.
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59
  • [26] Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperatures
    Nidhi
    Palacios, Tomas
    Chakraborty, Arpan
    Keller, Stacia
    Mishra, Umesh K.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2006, 27 (11) : 877 - 880
  • [27] Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
    Im, Ki-Sik
    Lee, Jae-Hoon
    Choi, Yeo Jin
    An, Sung Jin
    [J]. CRYSTALS, 2020, 10 (09): : 1 - 7
  • [28] High-Frequency Resonant Gate Driver for GaN HEMTs
    Yan, Yue
    Martinez-Perez, Antonio
    Castellazzi, Alberto
    [J]. 2015 IEEE 16TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL), 2015,
  • [29] High temperature performances of AlGaN/GaN power HFETs
    Nuttinck, S
    Banerjee, B
    Venkataraman, S
    Laskar, J
    Harris, M
    [J]. 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 221 - 223
  • [30] Low frequency noise in ion implanted GaN/AlGaN/GaN and AlGaN/GaN HEMTs
    Nakajima, M.
    Ohsawa, T.
    Hishiya, M.
    Nomoto, K.
    Nakamura, T.
    [J]. REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS, 2008, (26): : 79 - 82
12345