High-frequency AlGaN/GaN T-gate HEMTs on extreme low resistivity silicon substrates

被引：2

作者：

Liu, Yeke ^{[1
]}

Li, Cheng-Han ^{[1
]}

Hsu, Wen-Ching ^{[2
]}

Chuang, Chih-Yuan ^{[2
]}

Liu, Jia-Zhe ^{[2
]}

Hsu, Shawn S. H. ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[2] Global Wafers Co Ltd, Innovat Technol Res Ctr, Hsinchu 30013, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / SG期

关键词：

PLASTIC-DEFORMATION; GAN; TRANSISTORS; POWER;

D O I：

10.35848/1347-4065/ab70a5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The T-gate high frequency AlGaN/GaN high electron mobility transistors (HEMTs) are demonstrated on an 8 inch extremely-low resistivity (ELR) silicon substrate with a resistivity of similar to 2.5 m Omega cm to investigate the potential of using the ELR Si substrate for RF applications. The devices are also fabricated on the 60 a cm substrate for comparison, The 0.1 mu m T-gate is realized by e-beam lithography to improve the high frequency characteristics of the devices. The short-circuit current gain cutoff frequency (f(T)), the maximum oscillation frequency (f(max)), and maximum transconductance (g(m.max)) of 27 GHz, 71 GHz and 247 mS mm(-1) can be achieved, respectively. The obtained high frequency performance is among the best reported to date for the GaN HEMTs on such low resistivity silicon substrates. (C) 2020 The Japan Society of Applied Physics

引用

页数：5

共 50 条

[1] Reliability of T-gate AlGaN/GaN HEMTs
Burnham, Shawn D.
Bowen, Ross
Willadsen, Pete
Bracamontes, Hector
Hashimoto, Paul
Hu, Ming
Wong, Danny
Chen, Mary
Micovic, Miroslav
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2399 - 2403
[2] Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-Gate devices
Jessen, Gregg H.
Fitch, Robert C., Jr.
Gillespie, James K.
Via, Glen
Crespo, Antonio
Langley, Derrick
Denninghoff, Daniel J.
Trejo, Manuel, Jr.
Heller, Eric R.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) : 2589 - 2597
[3] Short-channel AlGaN/GaN HEMTs with 70 nm T-gate
Breitschädel, O
Gräbeldinger, H
Kuhn, B
Scholz, F
Walthes, W
Berroth, M
Daumiller, I
Schad, KB
Kohn, E
Schweizer, H
[J]. ELECTRONICS LETTERS, 1999, 35 (23) : 2018 - 2019
[4] Simulation Investigation of Slant Field Plate T-gate AlGaN/GaN HEMT for High-Frequency Power Applications
Du, Xiang
Mi, Minhan
Wang, Pengfei
Ma, Xiaohua
[J]. 2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
[5] Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, M.
Baeumler, M.
Brueckner, P.
Kemmer, T.
Konstanzer, H.
Graff, A.
Simon-Najasek, M.
Quay, R.
[J]. MICROELECTRONICS RELIABILITY, 2018, 88-90 : 385 - 388
[6] High-performance AlGaN/GaN HEMTs on silicon substrates
Javorka, P
Alam, A
Fox, A
Marso, M
Heuken, M
Kordos, P
[J]. ASDAM '02, CONFERENCE PROCEEDINGS, 2002, : 287 - 290
[7] High-frequency measurements of AlGaN/GaN HEMTs at high temperatures
Akita, M
Kishimoto, S
Mizutani, T
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) : 376 - 377
[8] AlGaN/GaN HEMTs on (001) silicon substrates
Joblot, S
Cordier, Y
Semond, F
Lorenzini, P
Chenot, S
Massies, J
[J]. ELECTRONICS LETTERS, 2006, 42 (02) : 117 - 118
[9] AlGaN/GaN HEMTs on (111) silicon substrates
Javorka, P
Alam, A
Wolter, M
Fox, A
Marso, M
Heuken, M
Lüth, H
Kordos, P
[J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (01) : 4 - 6
[10] Gate and Drain Low Frequency Noise of AlGaN/GaN HEMTs Featuring High and Low Gate Leakage Currents
Karboyan, S.
Tartarin, J. G.
Labat, N.
Lambert, B.
[J]. 2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2013,

← 1 2 3 4 5 →