AlGaN/GaN HEMTs on (111) silicon substrates

被引：64

作者：

Javorka, P ^{[1
]}

Alam, A ^{[1
]}

Wolter, M ^{[1
]}

Fox, A ^{[1
]}

Marso, M ^{[1
]}

Heuken, M ^{[1
]}

Lüth, H ^{[1
]}

Kordos, P ^{[1
]}

机构：

[1] Res Inst Julich, ISG I, Inst Thin Films & Interfaces, D-52425 Julich, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 01期

关键词：

GaN; MODFETs; semiconductor device fabrication; silicon;

D O I：

10.1109/55.974794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and f(max)/f(T) = 0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling similar to16 W/mm static heat dissipation.

引用

页码：4 / 6

页数：3

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