Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE

被引：0

作者：

Semond, Fabrice ^{[1
]}

Cordier, Yvon ^{[1
]}

Natali, Franck ^{[1
]}

Le Louarn, Arnaud ^{[1
]}

Vezian, Stephane ^{[1
]}

Joblot, Sylvain ^{[1
]}

Chenot, Sebastien ^{[1
]}

Baron, Nicolas ^{[1
]}

Frayssinet, Eric ^{[1
]}

Moreno, Jean-Christophe ^{[1
]}

Massies, Jean ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES | 2008年 / 1068卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During the last ten years, we have developed an efficient growth process of nitrides on silicon substrates by molecular beam epitaxy. In collaboration with partners AlGaN/GaN HEMTs on Si having promising performances have been fabricated. Focusing on the growth aspect and underlying some of the key issues, we present in this paper an overview of our contribution in the field of AlGaN/GaN HEMTs on Si substrates.

引用

页码：51 / 56

页数：6

共 50 条

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