Material and device issues of AlGaN/GaN HEMTs on silicon substrates

被引：15
|
作者：
Javorka, P
Alam, A
Marso, A
Wolter, M
Kuzmik, J
Fox, A
Heuken, M
Kordos, P [1 ]
机构：
[1] Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany
[2] Aixtron AG, D-52072 Aachen, Germany
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
GaN-based HEMTs; Si substrates; I-V characteristics;
D O I：
10.1016/S0026-2692(03)00067-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Selected material and device issues related to the performance of AlGaN/GaN HEMTs on (111) Si substrates are reported. It is shown that these devices can sustain significantly higher dc power (16 W/mm) than those grown on sapphire. Consequently smaller degradation in the device performance at higher temperatures (up to 400 degreesC) is demonstrated. Photoionisation spectroscopy reveals trap level of 1.85 eV, additional to two another levels found before in GaN-based HEMTs prepared on sapphire. Thus, AlGaN/GaN HEMTs on Si substrates demonstrate the viability of this technology for commercial application of high power rf devices. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：435 / 437
页数：3
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