Large area AlGaN/GaN HEMTs grown on insulating silicon carbide substrates

被引：0
|
作者：
Lossy, R
Chaturvedi, N
Heymann, P
Würfl, J
Müller, S
Köhler, K
机构：
[1] Ferdinand Braun Inst Hochsfrequenztech, D-12489 Berlin, Germany
[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2002年 / 194卷 / 02期
关键词：
D O I：
10.1002/1521-396X(200212)194:2<460::AID-PSSA460>3.0.CO;2-R
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Large periphery Al0.25Ga0.75N/GaN-HEMTs on SiC-substrates are fabricated on a 2-inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation f(max) varies from 27-79 GHz. With these devices a power density of 5.2 W/mm and a power level of 13.8 W is achieved at 2 GHz.
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收藏
页码：460 / 463
页数：4
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