Unified regional approach to consistent and symmetric DC/AC modeling of deep-submicron MOSFETs

被引：0

作者：

Zhou, X ^{[1
]}

Ben Chiah, S ^{[1
]}

Chandrasekaran, K ^{[1
]}

Lim, KY ^{[1
]}

Chan, L ^{[1
]}

Chu, S ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS | 2004年

关键词：

compact model; symmetry; charge-based model; deep-submicron MOSFET; poly depletion; Xsim;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deep-submicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source-drain symmetry, charge-based AC model fully consistent with DC without the need for C-V data, and inclusion of poly-depletion effect for both DC and AC models.

引用

页码：74 / 79

页数：6

共 50 条

[1] Device modeling issues in deep-submicron MOSFETs
Norwegian Univ of Science and, Technology, Trondheim, Norway
Semicond Int, 6 (7pp):
[2] RF modeling issues of deep-submicron MOSFETs for circuit design
Cheng, Yuhua
Schroter, Michael
Enz, Christian
Matloubian, Mishel
Pehlke, David
International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 416 - 419
[3] RF modeling issues of deep-submicron MOSFETs for circuit design
Cheng, YH
Schroter, M
Enz, C
Matloubian, M
Pehlke, D
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 416 - 419
[4] Scaling of InGaAs MOSFETs into deep-submicron
Wu, Yanqing
Ye, Peide D.
GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 2, 2010, 28 (05): : 185 - 201
[5] Scaling effects on deep-submicron vertical MOSFETs
Ahmadi, A
Rowlands, DD
Alam, K
MICROELECTRONICS: DESIGN, TECHNOLOGY, AND PACKAGING II, 2006, 6035
[6] REALIZATION OF DEEP-SUBMICRON MOSFETS BY LATERAL ETCHING
BURMESTER, R
WINNERL, J
NEPPL, F
MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) : 473 - 476
[7] Scaling of InGaAs MOSFETs into deep-submicron regime
Wu, Y. Q.
Gu, J. J.
Ye, P. D.
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
[8] DEEP-SUBMICRON MODELING TOOLS
CROW, AM
COLLEY, J
ELECTRONIC PRODUCT DESIGN, 1994, 15 (11): : 24 - &
[9] Unified Regional Approach to High Temperature SOI DC/AC Modeling
Ben Chiah, Siau
Zhou, Xing
Chen, Zuhui
Chen, Hung Ming
Yuan, Li
NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, 2012, : 796 - 799
[10] Unified length-/width-dependent drain current model for deep-submicron MOSFETs
Ben Chiah, S
Zhou, X
Lim, KY
NANOTECH 2003, VOL 2, 2003, : 342 - 345

← 1 2 3 4 5 →