A novel dual-gate high electron mobility transistor using a split-gate structure

被引：4
|
作者：
Collier, NJ
Cleaver, JRA
机构：
[1] Cavendish Laboratory, University of Cambridge
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 20期
关键词：
D O I：
10.1063/1.120228
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The split-gate concept has been applied to dual-gate high electron mobility structures for room-temperature operation, The gates are configured so that the second Sate is in close proximity to the,nap defined by the split-gate electrodes, This allows both Sates to control the carrier density in the same region of the device, so that it is possible to control the threshold voltage for either gate by altering the bias at which the other gate is held, The effect of changing the gate configuration is demonstrated. (C) 1997 American Institute of Physics.
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页码：2958 / 2960
页数：3
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