A novel dual-gate high electron mobility transistor using a split-gate structure

被引：4
|
作者：
Collier, NJ
Cleaver, JRA
机构：
[1] Cavendish Laboratory, University of Cambridge
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 20期
关键词：
D O I：
10.1063/1.120228
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The split-gate concept has been applied to dual-gate high electron mobility structures for room-temperature operation, The gates are configured so that the second Sate is in close proximity to the,nap defined by the split-gate electrodes, This allows both Sates to control the carrier density in the same region of the device, so that it is possible to control the threshold voltage for either gate by altering the bias at which the other gate is held, The effect of changing the gate configuration is demonstrated. (C) 1997 American Institute of Physics.
引用
下载
收藏
页码：2958 / 2960
页数：3
相关论文
共 50 条
  • [41] LATERAL POSITION CONTROL OF AN ELECTRON CHANNEL IN A SPLIT-GATE DEVICE
    GLAZMAN, LI
    LARKIN, IA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) : 32 - 35
  • [42] Split-Channel Dual-Gate High Voltage Thin Film Transistors
    Kong, Jiaquan
    Li, Xiaojie
    Liu, Chuan
    Ou, Hai
    She, Juncong
    Deng, Shaozhi
    Chen, Jun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (01) : 595 - 599
  • [43] A HIGH-VOLTAGE DUAL-GATE DMOS STRUCTURE (DGDMOS)
    DUNN, CN
    GAMMEL, JC
    SHIBIB, MA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C113 - C113
  • [44] Dual-Mode Reconfigurable Split-Gate Logic Transistor through Van der Waals Integration
    Chen, Xue
    Xue, Haozhe
    Wen, Yu
    You, Kai
    Jiang, Bei
    Ding, Guanglong
    Zhou, Kui
    Zhao, Zherui
    Yan, Yan
    Zhang, Meng
    Roy, Vellaisamy A. L.
    Han, Su-Ting
    Li, Feng
    Kuo, Chi-Ching
    Zhou, Ye
    Journal of Physical Chemistry Letters, 2024, 15 (39): : 9979 - 9986
  • [45] Equivalent circuit model for high-Tc superconducting flux flow transistor with a dual-gate structure
    Ko, Seokcheol
    Kang, Hyeong-Gon
    Lim, Sung-Hun
    Lee, Jong-Hwa
    Han, Byoung-Sung
    ICEC 20: PROCEEDINGS OF THE TWENTIETH INTERNATIONAL CRYOGENIC ENGINEERING CONFERENCE, 2005, : 525 - 528
  • [46] FREQUENCY-DIVIDER USING DUAL-GATE FIELD-EFFECT TRANSISTOR
    INOZEMTSEV, VV
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1978, 21 (02) : 439 - 440
  • [47] High SCR design for one-transistor split-gate full-featured EEPROM
    Chu, WT
    Lin, HH
    Wang, YH
    Hsieh, CT
    Sung, HC
    Lin, YT
    Wang, CS
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) : 498 - 500
  • [48] AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers
    Shiojima, K
    Makimura, T
    Kosugi, T
    Sugitani, S
    Shigekawa, N
    Ishikawa, H
    Egawa, T
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2623 - 2626
  • [49] A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure
    Sun, Zhonghao
    Huang, Huolin
    Sun, Nan
    Tao, Pengcheng
    Zhao, Cezhou
    Liang, Yung C.
    MICROMACHINES, 2019, 10 (12)
  • [50] A NOVEL METHOD FOR EVALUATING ELECTRON/HOLE MISMATCH IN SCALED SPLIT-GATE SONOS MEMORIES
    Tsuji, Yukihide
    Terai, Masayuki
    Fujieda, Shinji
    Syo, Toshiyuki
    Saito, Tomoya
    Ando, Koich
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST, 2008, : 349 - +
12345