A novel dual-gate high electron mobility transistor using a split-gate structure

The split-gate concept has been applied to dual-gate high electron mobility structures for room-temperature operation, The gates are configured so that the second Sate is in close proximity to the,nap defined by the split-gate electrodes, This allows both Sates to control the carrier density in the same region of the device, so that it is possible to control the threshold voltage for either gate by altering the bias at which the other gate is held, The effect of changing the gate configuration is demonstrated. (C) 1997 American Institute of Physics.