Aligned nanowire structures on silicon and flexible substrates and their applications

被引:2
|
作者
Yoon, Hargsoon [1 ]
Chintakuntla, Ritesh Reddy [1 ]
Varadan, Vijay K. [1 ]
Ruffin, Paul B. [2 ]
机构
[1] Univ Arkansas, Dept Elect Engn, Ctr Excellence Nano Micro & Neuroelect Sensors &, Fayetteville, AR 72701 USA
[2] US Army Aviat & Missile Res & Engn Ctr, Redstone Arsenal, AL 35898 USA
关键词
nanowires; silicon; tin oxide; sensors; flexible substrate; polyimide; transparent;
D O I
10.1117/12.668746
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on device fabrication and applications using vertically aligned nanowires (VANW) grown on silicon and flexible polyimide substrates. For bio hazards sensing applications, a tin oxide thin film was coated on the surface of nanowires to utilize high surface area density of nanostructured platform. Device fabrication processes include current silicon technology including lithography, plasma enhanced chemical vapor deposition (PECVD), and sol-gel process. The crystalline structure and sensing characteristics of tin oxide after annealing process were investigated with X-ray diffraction (XRD) and resistance monitoring at different concentration of isopropyl alcohol at part per million (ppm) levels. In addition, gold nanowires grown on flexible polyimide substrates were demonstrated, which can be used for a wide variety of applications including biomedical, display, and communication devices based on flexibility and transparency.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Aligned silver nanowire transparent electrodes for flexible electronic devices
    Kang, Saewon
    Cho, Seungse
    Ko, Hyunhyub
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 253
  • [22] Fabrication of Flexible and Vertical Silicon Nanowire Electronics
    Weisse, Jeffrey M.
    Lee, Chi Hwan
    Kim, Dong Rip
    Zheng, Xiaolin
    NANO LETTERS, 2012, 12 (06) : 3339 - 3343
  • [23] Wet chemically prepared silicon nanowire arrays on low-cost substrates for photovoltaic applications
    Jia, Guobin
    Hoeger, Ingmar
    Gawlik, Annett
    Dellith, Jan
    Bailey, Louise R.
    Ulyashin, Alexander
    Falk, Fritz
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (04): : 728 - 731
  • [24] Hydrogen passivation of silicon nanowire structures
    Aouida, S.
    Zaghouani, R. Benabderrahmane
    Bachtouli, N.
    Bessais, B.
    APPLIED SURFACE SCIENCE, 2016, 370 : 49 - 52
  • [25] Flexible Electronics: Thin Silicon Die on Flexible Substrates
    Zhang, Tan
    Hou, Zhenwei
    Johnson, R. Wayne
    Del Castillo, Linda
    Moussessian, Alina
    Greenwell, Robert
    Blalock, Benjamin J.
    IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2009, 32 (04): : 291 - 300
  • [26] Hyperbolic and plasmonic properties of Silicon/Ag aligned nanowire arrays
    Prokes, S. M.
    Glembocki, Orest J.
    Livenere, J. E.
    Tumkur, T. U.
    Kitur, J. K.
    Zhu, G.
    Wells, B.
    Podolskiy, V. A.
    Noginov, M. A.
    OPTICS EXPRESS, 2013, 21 (12): : 14962 - 14974
  • [27] Maximizing Transfection Efficiency of Vertically Aligned Silicon Nanowire Arrays
    Elnathan, Roey
    Delalat, Bahman
    Brodoceanu, Daniel
    Alhmoud, Hashim
    Harding, Frances J.
    Buehler, Katrin
    Nelson, Adrienne
    Isa, Lucio
    Kraus, Tobias
    Voelcker, Nicolas H.
    ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (46) : 7215 - 7225
  • [28] Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire
    A. Mohamedyaseen
    P. Suresh Kumar
    K. R. Kavitha
    N. A. Vignesh
    Silicon, 2022, 14 : 12177 - 12184
  • [29] Aligned silicon carbide nanowire crossed nets with high superhydrophobicity
    Niu, Jun Jie
    Wang, Jian Nong
    Xu, Qian Feng
    LANGMUIR, 2008, 24 (13) : 6918 - 6923
  • [30] Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire
    Mohamedyaseen, A.
    Kumar, P. Suresh
    Kavitha, K. R.
    Vignesh, N. A.
    SILICON, 2022, 14 (18) : 12177 - 12184