Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire

For the past four decades, the microelectronics industry has relied on silicon complementary MOS (metal oxide semiconductors). Because of their excellent characteristics, MOSFETs have become key components in VLSI. A new method for fabricating nano bridge arrays of various materials makes use of a sacrificial template structure: a suspended silicon nanowire array. This method produces nano bridge arrays of diverse materials. Energy harvesters such as thermoelectric micro/nano generators could be used to power Internet of Things sensors. According to the findings of this work, a planar micro/nano generator was constructed using silicon micromachining technologies and a thermoelectric material composed of silicon-germanium (SiGe) nanowire arrays. A top-down nanofabrication approach and electro-chemical lithography are utilised to produce silicon nanowires from SOI wafers using direct-write electron beam lithography (EBL). VLS (Vapor Liquid Solid Growth) was utilised to demonstrate monolithic integration of bottom-up nano wire arrays on pre-made micro platforms (CVD-VLS). It is demonstrated in this study that MacEtch may be used to manufacture Si NW arrays on vertically aligned Si wafers. Template-assisted manufacturing techniques have also been used to construct vertically aligned Si NW arrays with regulated diameter and number density.