Hydrogen passivation of silicon nanowire structures

被引：16
|
作者：
Aouida, S. [1 ]
Zaghouani, R. Benabderrahmane [1 ]
Bachtouli, N. [1 ]
Bessais, B. [1 ]
机构：
[1] Ctr Rech & Technol Energie, Lab Photovolta, BP 95,Technopole Borj Cedria, Tunis 2050, Tunisia
来源：
APPLIED SURFACE SCIENCE | 2016年 / 370卷
关键词：
Silicon nanowire structures; Surface defects; Minority carrier lifetime; Passivation; SURFACE RECOMBINATION;
D O I：
10.1016/j.apsusc.2016.02.116
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, we focus on hydrogen passivation of silicon nanowire structures (SiNWs) obtained by metal assisted chemical etching (MACE) intended to be used in silicon-based solar cells. SiNWs present high surface defects density causing the minority carrier lifetime reduction. Our results show that hydrogen passivation of SiNWs ameliorates minority carrier lifetime by reducing the dangling bonds and then the surface recombination velocity. This enhancement is limited by SiNWs distribution. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：49 / 52
页数：4
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