Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice

被引:34
|
作者
Wang, XR
Wang, JN
Sun, BQ
Jiang, DS
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
关键词
D O I
10.1103/PhysRevB.61.7261
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped GaAs/A1As superlattice in the transition process from static to dynamic electric field domain formations. Varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. Inside each voltage band, the frequency has a strong voltage dependence in the temperature range where the averaged current changes with the applied de voltage. This dependence can be understood in terms of motion of the system along a limit cycle.
引用
收藏
页码:7261 / 7264
页数:4
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