High-frequency current oscillations in doped GaAs/AlAs superlattices by travelling dipole domains

被引：24
|
作者：
Schomburg, E
Blomeier, T
Grenzer, J
Hofbeck, K
Lingott, I
Brandl, S
Ignatov, AA
Renk, KF
Pavel'ev, DG
Koschurinov, Y
Melzer, BY
Ustinov, V
Ivanov, S
Zhukov, A
Kop'ev, PS
机构：
[1] Univ Regensburg, Inst Angew Phys, D-93040 Regensburg, Germany
[2] Nizhny Novgorod State Univ, Dept Radiophys, Nizhnii Novgorod, Russia
[3] AF Ioffe Physicotech Inst, St Petersburg, Russia
来源：
PHYSICA E | 1998年 / 2卷 / 1-4期
关键词：
superlattices; transport; microwave devices;
D O I：
10.1016/S1386-9477(98)00062-9
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on current oscillations at different oscillation frequencies (2-46 GHz) in GaAs/AlAs superlattices with different miniband widths (16-55 meV) and on the application in microwave oscillators. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：295 / 298
页数：4
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