Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

被引:7
|
作者
Li, CY
Sun, BQ
Jiang, DS
Wang, JN
机构
[1] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
关键词
D O I
10.1088/0268-1242/16/4/309
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We observed the decrease of the hysteresis effect and the transition from the stable to the dynamic domain regime in doped superlattices with increasing temperature. The current-voltage characteristics and the behaviours of the domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-valley ratio in the V(F) curve decreases with increasing temperature, the hysteresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into consideration, gives a good agreement with the experimental results.
引用
收藏
页码:239 / 242
页数:4
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