Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains

被引：0
|
作者：
Altukhov, I., V [1 ]
Dizhur, S. E. [1 ]
Kagan, M. S. [1 ]
Khvalkovskiy, N. A. [1 ]
Paprotskiy, S. K. [1 ]
Vasil'evskii, I. S. [2 ]
Vinichenko, A. N. [2 ]
机构：
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia
[2] Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Moscow 115409, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2021年 / 66卷 / 12期
关键词：
FIELD DOMAINS; OSCILLATIONS;
D O I：
10.1134/S1064226921440017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did not observe. The phenomenon is referred to strong carrier depletion inside the triangular high-field domain. The domain modes transformations under the illumination were also found.
引用
收藏
页码：1385 / 1387
页数：3
相关论文
共 50 条
  • [1] Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains
    I. V. Altukhov
    S. E. Dizhur
    M. S. Kagan
    N. A. Khvalkovskiy
    S. K. Paprotskiy
    I. S. Vasil’evskii
    A. N. Vinichenko
    [J]. Journal of Communications Technology and Electronics, 2021, 66 : 1385 - 1387
  • [2] High Photoconductivity in Heavily Doped GaAs/AlAs Superlattices with Electric Domains
    Paprotskiy, S. K.
    Altukhov, I., V
    Kagan, M. S.
    Khvalkovskiy, N. A.
    Vasil'evskii, I. S.
    Vinichenko, A. N.
    [J]. 3RD INTERNATIONAL CONFERENCE TERAHERTZ AND MICROWAVE RADIATION: GENERATION, DETECTION AND APPLICATIONS (TERA-2018), 2018, 195
  • [3] Current oscillations and stable electric field domains in doped GaAs/AlAs superlattices
    Sun, BQ
    Jiang, DS
    Wang, XJ
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (04) : 401 - 405
  • [4] Oscillating electric field domains in GaAs/AlAs superlattices
    Kastrup, J
    Grahn, HT
    Ploog, K
    Merlin, R
    [J]. SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 157 - 160
  • [5] Formation times of electric-field domains in doped GaAs-AlAs superlattices
    Kastrup, J
    Prengel, F
    Grahn, HT
    Ploog, K
    Scholl, E
    [J]. PHYSICAL REVIEW B, 1996, 53 (03): : 1502 - 1506
  • [6] Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains
    I. V. Altukhov
    S. E. Dizhur
    M. S. Kagan
    N. A. Khvalkovskiy
    S. K. Paprotskiy
    I. S. Vasil’evskii
    A. N. Vinichenko
    [J]. Semiconductors, 2018, 52 : 473 - 477
  • [7] Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains
    Altukhov, I. V.
    Dizhur, S. E.
    Kagan, M. S.
    Khvalkovskiy, N. A.
    Paprotskiy, S. K.
    Vasil'evskii, I. S.
    Vinichenko, A. N.
    [J]. SEMICONDUCTORS, 2018, 52 (04) : 473 - 477
  • [8] An investigation of the formation mechanisms of electric field domains in GaAs/AlAs superlattices
    Sun, BQ
    Jiang, DS
    Liu, ZX
    Zhang, YH
    Liu, W
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01): : 307 - 313
  • [9] Electronic Tunneling and Electric Domains in GaAs/AlAs Superlattices at Room Temperature
    Altukhov, I., V
    Kagan, M. S.
    Paprotskiy, S. K.
    Khvalkovskiy, N. A.
    Vasil'evskii, I. S.
    Vinichenko, A. N.
    [J]. 3RD INTERNATIONAL CONFERENCE TERAHERTZ AND MICROWAVE RADIATION: GENERATION, DETECTION AND APPLICATIONS (TERA-2018), 2018, 195
  • [10] SELF-OSCILLATIONS OF DOMAINS IN DOPED GAAS-ALAS SUPERLATTICES
    KASTRUP, J
    KLANN, R
    GRAHN, HT
    PLOOG, K
    BONILLA, LL
    GALAN, J
    KINDELAN, M
    MOSCOSO, M
    MERLIN, R
    [J]. PHYSICAL REVIEW B, 1995, 52 (19): : 13761 - 13764
12345