Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice

被引:34
|
作者
Wang, XR
Wang, JN
Sun, BQ
Jiang, DS
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
关键词
D O I
10.1103/PhysRevB.61.7261
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped GaAs/A1As superlattice in the transition process from static to dynamic electric field domain formations. Varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. Inside each voltage band, the frequency has a strong voltage dependence in the temperature range where the averaged current changes with the applied de voltage. This dependence can be understood in terms of motion of the system along a limit cycle.
引用
收藏
页码:7261 / 7264
页数:4
相关论文
共 50 条
  • [21] Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature
    Wu, JQ
    Liu, ZX
    Jiang, DS
    Sun, BQ
    CHINESE PHYSICS LETTERS, 1999, 16 (02): : 143 - 145
  • [22] Current oscillations in n-doped GaAs/AlAs superlattice devices due to traveling field domains
    Blomeier, T
    Schomburg, WE
    Hofbeck, K
    Grenzer, J
    Brandl, S
    Lingott, I
    Ignatov, AA
    Renk, KF
    Pavelev, DG
    Koschurinov, Y
    Melzer, B
    Ustinov, V
    Ivanov, S
    Kopev, PS
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 204 (01): : 485 - 488
  • [23] FREQUENCY CHARACTERISTICS IN RESONANCE AT SELF-OSCILLATION HARMONICS.
    Minakova, I.I.
    Minina, G.P.
    Sil'nov, B.A.
    1600, (38):
  • [24] ELECTRONIC STATE OF ALAS/GAAS VERTICAL SUPERLATTICE IN MODULATION DOPED STRUCTURE
    TSUBAKI, K
    TOKURA, Y
    SUSA, N
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 869 - 874
  • [25] COLLECTIVE EXCITATIONS AND THEIR LINESHAPES FOR A MODULATION-DOPED GAAS/ALAS SUPERLATTICE
    SHARMA, AC
    SOOD, AK
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (08) : 1553 - 1562
  • [26] STUDY OF INTERDIFFUSION IN A TE-DOPED ALAS-GAAS SUPERLATTICE
    MEI, P
    SCHWARZ, SA
    VENKATESAN, T
    SCHWARTZ, CL
    COLAS, E
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) : 2165 - 2167
  • [27] Tunneling magnetoresistance in a mn δ-doped GaAs/AlAs/MnAs heterostructure
    Nakane, Ryosho
    Kondo, Jun
    Tanaka, Masaaki
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (29-32): : L755 - L757
  • [28] Current self-oscillation and driving-frequency dependence of negative-effective-mass diodes
    Cao, JC
    Li, AZ
    Lei, XL
    Feng, SL
    APPLIED PHYSICS LETTERS, 2001, 79 (21) : 3524 - 3526
  • [29] Current fluctuations in single barrier vertical GaAs/AlAs/GaAs tunneling devices
    Przybytek, J.
    Baj, M.
    ACTA PHYSICA POLONICA A, 2007, 112 (02) : 221 - 226
  • [30] The quantum acoustoelectric current in a doped superlattice GaAs:Si/GaAs:Be
    Nguyen Quang Bau
    Nguyen Van Hieu
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 63 : 121 - 130