Growth and characterization of ferromagnetic Ga1-xMnxAs epilayers on (001) ZnSe

被引：4

作者：

Chun, SH ^{[1
]}

Ku, KC ^{[1
]}

Potashnik, SJ ^{[1
]}

Schiffer, P ^{[1
]}

Samarth, N ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.1456523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the fabrication of ferromagnetic Ga1-xMnxAs (x = 0.03 and 0.04) epilayers on (00 1) ZnSe using a recrystallized GaAs template. The magnetic properties are comparable to those of Ga1-xMnxAs epilayers grown directly on GaAs. For instance, as-grown samples have a Curie temperature T-C = 65 K that can be increased to 80 K after postgrowth annealing in a N-2 atmosphere. The temperature dependence of the sample resistivity changes from insulating to metallic at the transition temperature. The n doping of ZnSe with Cl does not affect the ferromagnetism of Ga1-xMxAs, hence providing a way to possible applications with Ga1-xMnxAs/ZnSe heterostructures. (C) 2002 American Vacuum Society.

引用

页码：1266 / 1269

页数：4

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