Origin of the tunnel anisotropic magnetoresistance in Ga1-xMnxAs/ZnSe/Ga1-xMnxAs magnetic tunnel junctions of II-VI/III-V heterostructures

被引：97
|
作者：
Saito, H [1 ]
Yuasa, S [1 ]
Ando, K [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Umezono 1-1-1,Cent 2, Tsukuba, Ibaraki 3058568, Japan
来源：
PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 08期
关键词：
D O I：
10.1103/PhysRevLett.95.086604
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigated spin-dependent transport in magnetic tunnel junctions made of III-V Ga1-xMnxAs electrodes and II-VI ZnSe tunnel barriers. The high tunnel magnetoresistance (TMR) ratio up to 100% we observed indicates high spin polarization at the barrier/electrodes interfaces. We found anisotropic tunneling conductance having a magnitude of 10% with respect to the direction of magnetization to linearly depend on the magnetic anisotropy energy of Ga1-xMnxAs. This proves that the spin-orbit interactions in the valence band of Ga1-xMnxAs are responsible for the tunnel anisotropic magnetoresistance (TAMR) effect.
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页数：4
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