Tunneling spectroscopy in Fe/ZnSe/Ga1-xMnxAs magnetic tunnel diodes

被引：6
|
作者：
Saito, H. [1 ,2 ]
Yamamoto, A. [1 ]
Yuasa, S. [1 ]
Ando, K. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Agcy, Chiyoda Ku, PRESTO, Tokyo 1028666, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期
关键词：
D O I：
10.1063/1.2831367
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We performed tunneling spectroscopy in Fe/ZnSe/Ga1-xMnxAs magnetic tunnel diodes with a metal-insulator-semiconductor (MIS) structure. A GaAs-like longitudinal optical phonon mode was observed for the first time in M/I/Ga1-xMnxAs junctions. This implies a better quality with fewer defect states in a ZnSe barrier as compared to other barrier materials, such as AlAs and GaAs. The normalized conductance spectra reflect the density of states of Ga1-xMnxAs in MIS tunnel diodes, suggesting that direct tunneling is a major transport mechanism due to high-quality ZnSe barrier. (c) 2008 American Institute of Physics.
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页数：3
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