Tunneling spectroscopy in Fe/ZnSe/Ga1-xMnxAs magnetic tunnel diodes

被引：6
|
作者：
Saito, H. [1 ,2 ]
Yamamoto, A. [1 ]
Yuasa, S. [1 ]
Ando, K. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Agcy, Chiyoda Ku, PRESTO, Tokyo 1028666, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期
关键词：
D O I：
10.1063/1.2831367
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We performed tunneling spectroscopy in Fe/ZnSe/Ga1-xMnxAs magnetic tunnel diodes with a metal-insulator-semiconductor (MIS) structure. A GaAs-like longitudinal optical phonon mode was observed for the first time in M/I/Ga1-xMnxAs junctions. This implies a better quality with fewer defect states in a ZnSe barrier as compared to other barrier materials, such as AlAs and GaAs. The normalized conductance spectra reflect the density of states of Ga1-xMnxAs in MIS tunnel diodes, suggesting that direct tunneling is a major transport mechanism due to high-quality ZnSe barrier. (c) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Thermoelectric effects and magnetic anisotropy of Ga1-xMnxAs thin films
    Soldatov, I. V.
    Panarina, N.
    Hess, C.
    Schultz, L.
    Schaefer, R.
    PHYSICAL REVIEW B, 2014, 90 (10)
  • [32] Transport and magnetic properties of low temperature annealed Ga1-xMnxAs
    Kuryliszyn, I
    Wojtowicz, T
    Liu, X
    Furdyna, JK
    Dobrowolski, W
    Broto, JM
    Goiran, M
    Portugall, O
    Rakoto, H
    Raquet, B
    ACTA PHYSICA POLONICA A, 2002, 102 (4-5) : 659 - 665
  • [33] Analysis of magnetic field dependent mobility Ga1-xMnxAs layers
    Yoon, IT
    Kang, TW
    Kim, DJ
    SOLID STATE COMMUNICATIONS, 2006, 137 (03) : 171 - 176
  • [34] Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers
    Kuryliszyn-Kudelska, I.
    Wojtowicz, T.
    Liu, X.
    Furdyna, J. K.
    Dobrowolski, W.
    Domagala, J. Z.
    Lusakowska, E.
    Goiran, M.
    Haanappel, E.
    Portugall, O.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 : E1575 - E1577
  • [35] Surface treatments and magnetic properties of Ga1-xMnxAs thin films
    Maccherozzi, F.
    Panaccione, G.
    Rossi, G.
    Hochstrasser, M.
    Sperl, M.
    Reinwald, M.
    Woltersdorf, G.
    Wegscheider, W.
    Back, C. H.
    SURFACE SCIENCE, 2007, 601 (18) : 4283 - 4287
  • [36] Evolution of the magnetic anisotropy with carrier density in hydrogenated Ga1-xMnxAs
    Thevenard, L.
    Largeau, L.
    Mauguin, O.
    Lemaitre, A.
    Khazen, K.
    von Bardeleben, H. J.
    PHYSICAL REVIEW B, 2007, 75 (19)
  • [37] Nonlocal Effects on Magnetism in the Diluted Magnetic Semiconductor Ga1-xMnxAs
    Yu, Unjong
    Nili, Abdol-Madjid
    Mikelsons, Karlis
    Moritz, Brian
    Moreno, Juana
    Jarrell, Mark
    PHYSICAL REVIEW LETTERS, 2010, 104 (03)
  • [38] Analysis of Raman scattering of Ga1-xMnxAs dilute magnetic semiconductor
    Yoon, I. T.
    Kang, T. W.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2009, 321 (14) : 2257 - 2259
  • [39] Crossover critical behavior of Ga1-xMnxAs
    Yuldashev, Sh U.
    Igamberdiev, Kh T.
    Kwon, Y. H.
    Lee, Sanghoon
    Liu, X.
    Furdyna, J. K.
    Shashkov, A. G.
    Kang, T. W.
    PHYSICAL REVIEW B, 2012, 85 (12)
  • [40] Spin wave resonance in Ga1-xMnxAs
    Goennenwein, STB
    Graf, T
    Wassner, T
    Brandt, MS
    Stutzmann, M
    Philipp, JB
    Gross, R
    Krieger, M
    Zürn, K
    Ziemann, P
    Koeder, A
    Frank, S
    Schoch, W
    Waag, A
    APPLIED PHYSICS LETTERS, 2003, 82 (05) : 730 - 732
12345