Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers

被引：1
|
作者：
Kuryliszyn-Kudelska, I.
Wojtowicz, T.
Liu, X.
Furdyna, J. K.
Dobrowolski, W.
Domagala, J. Z.
Lusakowska, E.
Goiran, M.
Haanappel, E.
Portugall, O.
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[3] Lab Natl Chanps Magnet Pulses Toulouse, F-31432 Toulouse 04, France
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
ferromagnetic semiconductors; magnetotransport; III-V compound semiconductors; magnetooptical Kerr effect;
D O I：
10.1016/j.jmmm.2003.12.808
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-field magnetic measurements performed with the use of magnetooptical Kerr effect in the polar configuration as well as high-field and low-field magnetotransport studies were carried out on Ga1-xMnxAs epilayers grown by low-temperature molecular beam epitaxy, and subsequently annealed under various conditions. The structural investigations by means of high resolution XRD were also performed. We observe significant changes in magnetoresistivity curves, magnetization and strain introduced by the annealing. (C) 2003 Elsevier B. V. All rights reserved.
引用
收藏
页码：E1575 / E1577
页数：3
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