Growth and characterization of ferromagnetic Ga1-xMnxAs epilayers on (001) ZnSe

We describe the fabrication of ferromagnetic Ga1-xMnxAs (x = 0.03 and 0.04) epilayers on (00 1) ZnSe using a recrystallized GaAs template. The magnetic properties are comparable to those of Ga1-xMnxAs epilayers grown directly on GaAs. For instance, as-grown samples have a Curie temperature T-C = 65 K that can be increased to 80 K after postgrowth annealing in a N-2 atmosphere. The temperature dependence of the sample resistivity changes from insulating to metallic at the transition temperature. The n doping of ZnSe with Cl does not affect the ferromagnetism of Ga1-xMxAs, hence providing a way to possible applications with Ga1-xMnxAs/ZnSe heterostructures. (C) 2002 American Vacuum Society.