Ferromagnetic resonance in Ga1-xMnxAs

被引：8
|
作者：
Goennenwein, STB [1 ]
Graf, T
Wassner, T
Brandt, MS
Stutzmann, M
Koeder, A
Frank, S
Schoch, W
Waag, A
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany
来源：
JOURNAL OF SUPERCONDUCTIVITY | 2003年 / 16卷 / 01期
关键词：
dilute magnetic semiconductor; GaMnAs; spin waves; ferromagnetic resonance; exchange constant;
D O I：
10.1023/A:1023284617994
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on ferromagnetic resonance measurements of Ga1-xMnxAs thin films with Mn contents 0.022 less than or equal to x less than or equal to 0.051. For x greater than or equal to 0.036 and the external magnetic field normal to the thin film, we observe several resonances, which we identify as spin wave resonances. The nonquadratic mode spacing can be consistently explained by a linear gradient in the magnetic properties of the films. From the measurements, the exchange constant A can be deduced for different Mn contents x.
引用
收藏
页码：75 / 78
页数：4
相关论文
共 50 条
  • [1] Measurement of magnetization of Ga1-xMnxAs by ferromagnetic resonance
    Hagmann, J. A.
    Traudt, K.
    Zhou, Y. Y.
    Liu, X.
    Dobrowolska, M.
    Furdyna, J. K.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2014, 360 : 137 - 142
  • [2] Ferromagnetic resonance in Ga1-xMnxAs dilute magnetic semiconductors
    Liu, Xinyu
    Furdyna, Jacek K.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (13) : R245 - R279
  • [3] Magnetic order in semiconducting, ferromagnetic Ga1-xMnxAs
    Fedorych, OM
    Wilamowski, Z
    Potemski, M
    Byszewski, M
    Sadowski, J
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S492 - S493
  • [4] Exchange biasing of the ferromagnetic semiconductor Ga1-xMnxAs
    Eid, KF
    Stone, MB
    Ku, KC
    Maksimov, O
    Schiffer, P
    Samarth, N
    Shih, TC
    Palmstrom, CJ
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (09) : 1556 - 1558
  • [5] Spin wave resonance in Ga1-xMnxAs
    Goennenwein, STB
    Graf, T
    Wassner, T
    Brandt, MS
    Stutzmann, M
    Philipp, JB
    Gross, R
    Krieger, M
    Zürn, K
    Ziemann, P
    Koeder, A
    Frank, S
    Schoch, W
    Waag, A
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (05) : 730 - 732
  • [6] Far infrared absorption spectra in ferromagnetic Ga1-xMnxAs
    Nagai, Y
    Kunimoto, T
    Nagasaka, K
    Nojiri, H
    Motokawa, M
    Matsukura, F
    Ohno, H
    [J]. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 268 - 269
  • [7] Magnetoresistance and Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs
    Edmonds, KW
    Campion, RP
    Wang, KY
    Neumann, AC
    Gallagher, BL
    Foxon, CT
    Main, PC
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 6787 - 6789
  • [8] Ferromagnetic resonance in Ga1-xMnxAs:: Effects of magnetic anisotropy -: art. no. 205204
    Liu, X
    Sasaki, Y
    Furdyna, JK
    [J]. PHYSICAL REVIEW B, 2003, 67 (20)
  • [9] Magnetic anisotropy of Ga1-xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonance
    Bihler, C.
    Huebl, H.
    Brandt, M. S.
    Goennenwein, S. T. B.
    Reinwald, M.
    Wurstbauer, U.
    Doeppe, M.
    Weiss, D.
    Wegscheider, W.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (01)
  • [10] Spin-polarized mobility in ferromagnetic superlattices of Ga1-xMnxAs
    da Silva, LL
    Boselli, MA
    Wang, XF
    Lima, ICD
    Ghazali, A
    [J]. PHYSICA B-CONDENSED MATTER, 2002, 320 (1-4) : 392 - 395
12345