Analysis of Total Ionizing Dose Effects on a Pseudo-Static Random Access Memory (PSRAM)

被引：2
|
作者：
Both, T. H. [1 ]
Wirth, G. I. [1 ]
Pereira Junior, E. C. F. [2 ]
Goncalez, O. L. [2 ]
Vaz, R. G. [2 ]
Pereira, M. A. [2 ]
Milagres, D. C. [2 ]
机构：
[1] Univ Fed Rio Grande do Sul, Programa Posgrad Microeletron, BR-91501970 Porto Alegre, RS, Brazil
[2] Inst Estudos Avaados, Dept Cincia Tecnologia Aeroespacial, BR-12228001 Sao Paulo, Brazil
来源：
MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2012 | 2012年 / 49卷 / 01期
关键词：
DEVICES;
D O I：
10.1149/04901.0069ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The purpose of this work is to describe the total ionizing dose effects on a commercial ISSI 4Mb pseudo-static random access memory (PSRAM). Experimental results from an irradiation test performed at the Ionizing Radiation Laboratory at Instituto de Estudos Avancados (LRI/IEAv) using a Co-60 gamma-radiation source were analyzed and compared to simulation results of typical memory circuits and typical memory architecture, in order to identify error patterns and failure mechanisms.
引用
收藏
页码：69 / 76
页数：8
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