GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

被引：0
|
作者：
Lu, X. M. [1 ]
Kumagai, N. [1 ]
Kitada, T. [1 ]
Isu, T. [1 ]
机构：
[1] Univ Tokushima, Inst Sci & Technol, Ctr Frontier Res Engn, Tokushima 7708506, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词：
quantum dots; four-wave mixing; multilayer cavity; wavelength conversion; molecular beam epitaxy;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We grew the GaAs/AlAs triple-coupled multilayer cavity structure with InAs QDs, which were embedded in topside GaAs cavity. The frequency separations of the cavity modes depending on the cavity layer thickness were measured using reflection spectra. Three reflection dips around telecommunication wavelength of 1.5 mu m were due to the cavity modes and equivalent frequency separation between two adjacent modes was obtained. Time-resolved four-wave mixing (FWM) signals from the triple-coupled cavity were measured using femtosecond laser system. The wavelength-converted FWM signal of was clearly observed when the triple-coupled cavity sample was excited by spectrally shaped laser pulses.
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页数：2
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