GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

We grew the GaAs/AlAs triple-coupled multilayer cavity structure with InAs QDs, which were embedded in topside GaAs cavity. The frequency separations of the cavity modes depending on the cavity layer thickness were measured using reflection spectra. Three reflection dips around telecommunication wavelength of 1.5 mu m were due to the cavity modes and equivalent frequency separation between two adjacent modes was obtained. Time-resolved four-wave mixing (FWM) signals from the triple-coupled cavity were measured using femtosecond laser system. The wavelength-converted FWM signal of was clearly observed when the triple-coupled cavity sample was excited by spectrally shaped laser pulses.