Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature

被引：25

作者：

Kaizu, Toshiyuki ^{[1
,2
]}

Matsumura, Takuya ^{[2
]}

Kita, Takashi ^{[2
]}

机构：

[1] Kobe Univ, Ctr Supports Res & Educ Act, Nada Ku, Kobe, Hyogo 6578501, Japan

[2] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 15期

关键词：

OPTICAL-PROPERTIES; POLARIZATION; DEPENDENCE; SIZE; PHOTOLUMINESCENCE;

D O I：

10.1063/1.4933182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of the GaAs capping temperature on the morphological and photoluminescence (PL) properties of InAs quantum dots (QDs) on GaAs(001). The broadband tuning of the emission wavelength from 1.1 to 1.3 mu m was achieved at room temperature by only adjusting the GaAs capping temperature. As the capping temperature was decreased, the QD shrinkage due to In desorption and In-Ga intermixing during the capping process was suppressed. This led to QDs with a high aspect ratio, and resultantly, the emission wavelength shifted toward the longer-wavelength side. In addition, the linearly polarized PL intensity elucidated anisotropic characteristics reflecting the shape anisotropy of the embedded QDs, in which a marked change in polarization anisotropy occurred at capping temperatures lower than 460 degrees C. (C) 2015 AIP Publishing LLC.

引用

页数：6

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