Single-electron transistors in GaN/AlGaN heterostructures

被引：17
|
作者：
Chou, H. T. [1 ]
Goldhaber-Gordon, D.
Schmult, S.
Manfra, M. J.
Sergent, A. M.
Molnar, R. J.
机构：
[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[4] MIT, Lincoln Lab, Lexington, MA 02420 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2226454
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report transport properties of two single-electron transistors (SETs) on a GaN/AlGaN heterostructure. The first SET formed accidentally in a quantum point contact near pinchoff. Its small size produces large energy scales (a charging energy of 7.5 meV and well-resolved excited states). The second, intentionally fabricated SET is much larger. More than 100 uniformly spaced Coulomb oscillations yield a charging energy of 0.85 meV. Excited states are not resolvable in Coulomb diamonds, and Coulomb blockade peak height remains constant with increasing temperature, indicating that transport is through multiple quantum levels even at the 450 mK base electron temperature of our measurements. Coulomb oscillations of both SETs are highly stable, comparable to the best GaAs SETs. (c) 2006 American Institute of Physics.
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页数：3
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