Carbon nanotube single-electron transistors with single-electron charge storages

被引：4

作者：

Seike, Kohei ^{[1
]}

Kanai, Yasushi ^{[1
]}

Ohno, Yasuhide ^{[1
,2
]}

Maehashi, Kenzo ^{[1
,3
]}

Inoue, Koichi ^{[1
]}

Matsumoto, Kazuhiko ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan

[3] Tokyo Univ Agr & Technol, Inst Engn, Koganei, Tokyo 1848588, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 06期

关键词：

FIELD-EFFECT TRANSISTOR; ROOM-TEMPERATURE; LOGIC GATES; MEMORY; BIOSENSORS; CIRCUITS; DEVICES; FILM;

D O I：

10.7567/JJAP.54.06FF05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon nanotube single-electron transistors (CNTSETs) with single-electron charge storages were fabricated to detect single-electron charges from a CNT channel to a charge storage. A single-electron charge storage is composed of Au floating dots between tunneling and blocking layers of Al2O3. Electrons were injected into a Au floating dot by sweeping gate voltage, and the Coulomb peak was shifted owing to the effect of electrons inside the Au floating dot. In addition, a staircase relationship between the charging voltages and the peak positions was observed. The calculation based on this staircase relationship revealed that the single-electron charging into the Au floating dot was obtained. Therefore, our devices are one of the candidates for CNTSET-based single-electron memories, which can be used for digital operating and ultralow-power consumption devices. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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