Single-electron transistors

被引:0
|
作者
Hadley, P
Lientschnig, G
Lai, MJ
机构
[1] Delft Univ Technol, Dept Nanosci, NL-2628 CJ Delft, Netherlands
[2] ITRI, ERSO, Hsinchu 310, Taiwan
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-electron transistors (SET's) are often discussed as elements of nanometer scale electronic circuits because they can be made very small and they can detect the motion of individual electrons. However, SET's have low voltage gain, high output impedances, and are sensitive to random background charges. This makes it unlikely that single-electron transistors would ever replace field-effect transistors (FET's) in applications where large voltage gain or low output impedance is necessary. The most promising applications for SET's are charge-sensing applications such as the readout of few electron memories, the readout of charge-coupled devices, and precision charge measurements in metrology.
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页码:125 / 132
页数:8
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