Electrical characteristics of Ni Ohmic contact on n-type GeSn

被引：23
|
作者：
Li, H. [1 ,2 ]
Cheng, H. H. [1 ,2 ]
Lee, L. C. [3 ]
Lee, C. P. [3 ]
Su, L. H. [4 ,5 ]
Suen, Y. W. [4 ,5 ]
机构：
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
[3] Natl Chiao Tung Univ, Ctr Nano Sci & Technol, Hsinchu 300, Taiwan
[4] Natl Chung Hsing Univ, Dept Phys, Taichung 402, Taiwan
[5] Natl Chung Hsing Univ, Inst Nano Sci, Taichung 402, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 24期
关键词：
GERMANIUM;
D O I：
10.1063/1.4883748
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 degrees C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity. (C) 2014 AIP Publishing LLC.
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页数：3
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