THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER

被引：10
|
作者：
WU, JW
CHANG, CY
LIN, KC
CHANG, EY
CHEN, JS
LEE, CT
机构：
[1] NATL CHIAO TUNG UNIV, INST MAT SCI & ENGN, HSINCHU, TAIWAN
[2] NATL CENT UNIV, INST OPT SCI, CHUNGLI 32054, TAIWAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 02期
关键词：
INGAAS; OHMIC CONTACT; SPECIFIC CONTACT RESISTANCE; THERMAL STABILITY;
D O I：
10.1007/BF02659625
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450 degrees C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au.-A new phase of Au4In appears after annealing at 300 degrees C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of(Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450 degrees C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of(Ti/Pt/Au)-InGaAs ohmic contact is better than that of(Ni/Ge/Au)-InGaAs ohmic contact.
引用
收藏
页码：79 / 82
页数：4
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