Pd/Si/Ti/Pt ohmic contact to n-type InGaAs for AlGaAs/GaAs HBT

被引：1
|
作者：
Kim, IH [1 ]
机构：
[1] Chungju Natl Univ, Dept Mat Sci & Engn, Nano Technol Lab, Chungju 380702, Chungbuk, South Korea
来源：
MATERIALS LETTERS | 2003年 / 57卷 / 19期
关键词：
Pd/Si; InGaAs; ohmic contact; compound semiconductor; solid-phase regrowth; HBT;
D O I：
10.1016/S0167-577X(02)01372-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pd/Si/Ti/Pt ohmic contact to n-type InGaAs was investigated. As-deposited contact showed non-ohmic behavior, and high specific contact resistivity of 5x10(-3) Omega cm(2) was achieved by rapid thermal annealing at 375 degreesC for 10 s. However, the specific contact resistivity decreased remarkably to 1.7x10(-6) and 2x10(-6) Omega cm(2) at 375 degreesC/60 s and 425 degreesC/10 s, respectively. Superior ohmic contact and nonspiking planar interface between ohmic materials and InGaAs were maintained even after annealing at 450 degreesC. This thermally stable ohmic contact system is a promising candidate for compound semiconductor devices. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：2769 / 2775
页数：7
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