Comparison of ultra-thin gate oxide ESD protection capability of silicided and silicide-blocked MOSFETs

In this paper, ultra-thin oxide ESD protection capability of silicided and silicide-blocked MOSFETs is studied. We find that ground Gate NMOSFETs (GGNMOS) with silicided drain can provide much better ultra-thin oxide ESD protection capability than the GGNMOS with silicide-blocked drain, and oxide damage is occurred at the transient before the device occurring the snapback. Because the device under the TLP and ESD has different discharge behaviors at the transient before the snapback, it results in that TLP test result does not correlate to ESD test result.