Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications

被引：6

作者：

Kikkawa, Toshihide ^{[1
]}

Kanamura, Masahito ^{[1
]}

Ohki, Toshihiro ^{[1
]}

Imanishi, Kenji ^{[1
]}

Watanabe, Keiji ^{[1
]}

Joshin, Kazukiyo ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2 | 2012年 / 50卷 / 03期

关键词：

D O I：

10.1149/05003.0323ecst

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, recent progress of GaN high electron mobility transistors (HEMTs) will be addressed. GaN HEMTs have been developed mainly for power amplifiers and power conversion units. For mass production, suppression of trapping phenomena, such as current collapse was required. Surface structures and GaN buffer layers are key features for controlling trap formation, resulting in long reliability. Drift phenomena which are critical characteristics for power amplifier were also investigated in detail. For power conversion, normally-off technology is essential. In this study, we developed the insulated-gate structure using atomic layer deposition.

引用

页码：323 / 332

页数：10

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