Passive components on AlN for application in AlGaN/GaN power amplifiers

被引：0
|
作者：
Jacobs, B [1 ]
van Straaten, B [1 ]
Kramer, M [1 ]
Karouta, F [1 ]
De Hek, P [1 ]
Suijker, E [1 ]
Van Dijk, R [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Elect Engn, Opto Elect Dev Grp, NL-5600 MB Eindhoven, Netherlands
来源：
GAN AND RELATED ALLOYS-2001 | 2002年 / 693卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuities, metal-insulator-metal (MIM) capacitors and resistors were measured and modelled. These elements are embedded between two adaptors for RF probing. A technique was developed to de-embed the adaptors from the overall measurement and hence correctly determine the properties Of the element itself. Measurements on elements containing multiple ports with right angles can best be carried out using standard calibration techniques followed by carefully reorienting the probes. It is shown that for accurate design of matching networks operating at 10 GHz each element has to be carefully modelled. The method presented in this paper can be a useful contribution tackling some of the problems related to the design of these networks.
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页码：629 / 634
页数：4
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