Broadband AlGaN/GaN High Power Amplifiers, Robust LNAs, and Power Switches in L-Band

被引：0

作者：

Piotrowicz, S. ^{[1
]}

Mallet-Guy, B. ^{[2
]}

Chartier, E. ^{[1
]}

Jacquet, J. C. ^{[1
]}

Jardel, O. ^{[1
]}

Lancereau, D. ^{[1
]}

Le Coustre, G. ^{[1
]}

Morvan, E. ^{[1
]}

Aubry, R. ^{[1
]}

Dua, C. ^{[1
]}

Oualli, M. ^{[1
]}

Richard, M. ^{[1
]}

Sarazin, N. ^{[1
]}

diForte-Poisson, M. A. ^{[1
]}

Delaire, J. ^{[2
]}

Mancuso, Y. ^{[2
]}

Delage, S. L. ^{[1
]}

机构：

[1] ALCATEL THALES 3 5 LAB, Route Nozay, Marcoussis, France

[2] THALES SYST AERPORTES, Elancourt, France

来源：

2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年

关键词：

HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN-based HEMT's have demonstrated better power-frequency performances than other devices using smaller band gap semiconductor materials. Studies have already been realized to evaluate the impact of GaN-based devices at the system level. In this paper, we present the design and the realization of broadband power amplifiers, low noise amplifiers and power switches for future generation of TR-RX modules. These functions are based on the AlGaN/GaN HEMT technology developed at Alcatel-Thales III-V Lab.

引用

页码：1784 / +

页数：2

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