L-band AlGaN/GaN Power Amplifier with Protection Against Load Mismatch

被引：0
|
作者：
van Heijningen, M. [1 ]
van der Bent, G. [1 ]
van der Houwen, E. H. [1 ]
Chowdhary, A. [2 ]
van Vliet, F. E. [1 ]
机构：
[1] TNO, Oude Waalsdorperweg 63, NL-2597 AK The Hague, Netherlands
[2] ESA ESTEC, Noordwijk, Netherlands
来源：
2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年
关键词：
High power amplifiers; Gallium nitride; MMICs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Solid-state power amplifiers need protection at the output to handle high reflections due to mismatch. Normally this is implemented by using a ferrite-based isolator. These are however large and bulky components. This paper presents a Gallium-Nitride power amplifier module with automatic protection against large reflections based on fold-back protection, by sensing the reflected power. Measurements have been performed on a 100 W L-band power amplifier module at full reflection (short at the output) without damage to the amplifier. The reaction time of the protection mechanism is less than 0.5 mu s.
引用
收藏
页码：1379 / 1382
页数：4
相关论文
共 50 条
  • [1] L-band AlGaN/GaN Power Amplifier with Protection Against Load Mismatch
    van Heijningen, M.
    van der Bent, G.
    van der Houwen, E. H.
    Chowdhary, A.
    van Vliet, F. E.
    [J]. 2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2013, : 408 - 411
  • [2] HIGH EFFICIENCY L-BAND GAN POWER AMPLIFIER
    Aich, S.
    Dhar, J.
    Garg, S. K.
    Bakori, B. V.
    Arora, R. K.
    [J]. MICROWAVE JOURNAL, 2011, 54 (10) : 88 - +
  • [3] Balanced Power Amplifier Protection Against Load Mismatch
    Sinha, Shruti
    Rao, Ch. V. N.
    Pujara, Dhaval
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2018, 28 (02) : 165 - 167
  • [4] L-Band Power Amplifier Design with Discrete GaN Transistor
    Amiri, Mina
    Alekajbaf, Yasin
    Mssoumi, Nasser
    [J]. 26TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE 2018), 2018, : 311 - 314
  • [5] A GaN High Power and Efficient Amplifier for L-Band Galileo System
    Giofre, Rocco
    Colantonio, Paolo
    Giannini, Franco
    Gonzalez, Laura
    de Arriba, Francisco
    Cabria, Lorena
    Baglieri, Didier
    [J]. 2015 INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS WORKSHOP (INMMIC), 2015,
  • [6] A High Efficiency GaN HEMT High Power Amplifier at L-band
    Kosaka, N.
    Kuwata, E.
    Hangai, M.
    Yamanaka, K.
    Yamasaki, T.
    Koyama, H.
    [J]. 2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2014, : 789 - 791
  • [7] A GaN Power Amplifier for 100 VDC Bus in GPS L-band
    Formicone, G.
    Burger, J.
    Custer, J.
    Veitschegger, W.
    Bosi, G.
    Raffo, A.
    Vannini, G.
    [J]. 2017 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR), 2017, : 100 - 103
  • [8] A 50OW push-pull AlGaN/GaN HEMT amplifier for l-band high power application
    Maekawa, Arata
    Yamamoto, Takashi
    Mitani, Eizo
    Sano, Seigo
    [J]. 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 722 - 725
  • [9] L-band low noise AlGaN/GaN HEMT
    Abolduyev, I.
    Gladysheva, N. B.
    Dorofeev, A. A.
    Minnebaev, V. M.
    Tchemyavsky, A. A.
    [J]. 2006 16TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY, VOLS 1 AND 2, CONFERENCE PROCEEDINGS, 2006, : 180 - 180
  • [10] Broadband AlGaN/GaN High Power Amplifiers, Robust LNAs, and Power Switches in L-Band
    Piotrowicz, S.
    Mallet-Guy, B.
    Chartier, E.
    Jacquet, J. C.
    Jardel, O.
    Lancereau, D.
    Le Coustre, G.
    Morvan, E.
    Aubry, R.
    Dua, C.
    Oualli, M.
    Richard, M.
    Sarazin, N.
    diForte-Poisson, M. A.
    Delaire, J.
    Mancuso, Y.
    Delage, S. L.
    [J]. 2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2009, : 1784 - +
12345