L-band AlGaN/GaN Power Amplifier with Protection Against Load Mismatch

被引：0
|
作者：
van Heijningen, M. [1 ]
van der Bent, G. [1 ]
van der Houwen, E. H. [1 ]
Chowdhary, A. [2 ]
van Vliet, F. E. [1 ]
机构：
[1] TNO, Oude Waalsdorperweg 63, NL-2597 AK The Hague, Netherlands
[2] ESA ESTEC, NL-2201 AZ Noordwijk, Netherlands
来源：
2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2013年
关键词：
High power amplifiers; Gallium nitride; MMICs;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Solid-state power amplifiers need protection at the output to handle high reflections due to mismatch. Normally this is implemented by using a ferrite-based isolator. These are however large and bulky components. This paper presents a Gallium-Nitride power amplifier module with automatic protection against large reflections based on fold-back protection, by sensing the reflected power. Measurements have been performed on a 100 W L-band power amplifier module at full reflection (short at the output) without damage to the amplifier. The reaction time of the protection mechanism is less than 0.5 mu s.
引用
收藏
页码：408 / 411
页数：4
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