Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates

被引:0
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作者
A. N. Alekseev
S. B. Aleksandrov
A. É. Byrnaz
S. V. Kokin
D. M. Krasovitskiĭ
M. V. Pavlenko
S. I. Petrov
M. Yu. Pogorel’skiĭ
Yu. V. Pogorel’skiĭ
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
A. G. Tkachenko
V. P. Chalyĭ
A. P. Shkurko
机构
[1] Svetlana-ROST Corporation,
来源
Technical Physics Letters | 2008年 / 34卷
关键词
71.55.Eq; 74.78.Fk; 81.15.-z; 81.16.-c;
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暂无
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学科分类号
摘要
Preliminary results on the transfer of the ammonia MBE technology of nitride transistor heterostructures to AlN/SiC substrates. The main device properties achieved previously with AlN/AlGaN/GaN/AlGaN multilayer heterostructures on sapphire are almost completely reproduced on the new base despite increased roughness of the initial AlN/SiC substrates as compared to sapphire. The saturation current of prototype field-effect transistors based on the nitride heterostructures grown on AlN/SiC substrates are comparable with the analogous parameter of devices grown on sapphire and exhibits no decrease related to thermal scattering at high bias voltages.
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页码:711 / 713
页数:2
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