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- [1] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates[J]. TECHNICAL PHYSICS LETTERS, 2008, 34 (08) : 711 - 713Alekseev, A. N.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaAleksandrov, S. B.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaByrnaz, A. E.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaKokin, S. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaKrasovitskii, D. M.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPavlenko, M. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPetrov, S. I.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPogorel'skii, M. Yu.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPogorel'skii, Yu. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaSokolov, I. A.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaSokolov, M. A.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaStepanov, M. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaTkachenko, A. G.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaChalyi, V. P.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaShkurko, A. P.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, Russia
- [2] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE[J]. Technical Physics Letters, 2005, 31 : 864 - 867A. N. Alekseev论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,S. B. Aleksandrov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. É. Byrnaz论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,L. É. Velikovskii论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,I. É. Velikovskii论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,D. M. Krasovitskii论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. V. Pavlenko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,S. I. Petrov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,Yu. V. Pogorel’skii论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,I. A. Sokolov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. A. Sokolov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. V. Stepanov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. G. Tkachenko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. P. Shkurko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,V. P. Chalyi论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,
- [3] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE[J]. TECHNICAL PHYSICS LETTERS, 2005, 31 (10) : 864 - 867Alekseev, AN论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaAleksandrov, SB论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaByrnaz, AÉ论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaVelikovskii, LÉ论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaVelikovskii, IÉ论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaKrasovitskii, DM论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPavlenko, MV论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPetrov, SI论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPogorel'skii, YV论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaSokolov, IA论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaSokolov, MA论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaStepanov, MV论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaTkachenko, AG论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaShkurko, AP论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaChalyi, VP论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, Russia
- [4] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates[J]. TECHNICAL PHYSICS LETTERS, 2008, 34 (04) : 300 - 302Alekseev, A. N.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaAleksandrov, S. B.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaByrnaz, A. E.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaVelikovskii, L. E.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaVelikovskii, I. E.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaKrasovitskii, D. M.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPavlenko, M. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPetrov, S. I.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPogorel'skii, M. Yu.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPogorel'skii, Yu. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaSokolov, I. A.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaSokolov, M. A.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaStepanov, M. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaTkachenko, A. G.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaShkurko, A. P.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaChalyi, V. P.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, Russia
- [5] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates[J]. Technical Physics Letters, 2008, 34 : 300 - 302A. N. Alekseev论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,S. B. Aleksandrov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. É. Byrnaz论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,L. É. Velikovskiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,I. É. Velikovskiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,D. M. Krasovitskiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. V. Pavlenko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,S. I. Petrov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. Yu. Pogorel’skiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,Yu. V. Pogorel’skiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,I. A. Sokolov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. A. Sokolov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. V. Stepanov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. G. Tkachenko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. P. Shkurko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,V. P. Chalyĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,
- [6] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE[J]. TECHNICAL PHYSICS LETTERS, 2006, 32 (11) : 960 - 963Alekseev, A. N.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaAleksandrov, S. B.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaByrnaz, A. E.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaVelikovskii, L. E.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaVelikovskii, I. E.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaVeretekha, A. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaKrasovitskii, D. M.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPavlenko, M. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPetrov, S. I.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPogorel'skii, M. Yu.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaPogorel'skii, Yu. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaSokolov, I. A.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaSokolov, M. A.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaStepanov, M. V.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaTkachenko, A. G.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaShkurko, A. P.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, RussiaChalyi, V. P.论文数: 0 引用数: 0 h-index: 0机构: Svetlana ROST Corp, St Petersburg, Russia Svetlana ROST Corp, St Petersburg, Russia
- [7] Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE[J]. Technical Physics Letters, 2006, 32 : 960 - 963A. N. Alekseev论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,S. B. Aleksandrov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. É. Byrnaz论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,L. É. Velikovskiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,I. É. Velikovskiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. V. Veretekha论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,D. M. Krasovitskiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. V. Pavlenko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,S. I. Petrov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. Yu. Pogorel’skiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,Yu. V. Pogorel’skiĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,I. A. Sokolov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. A. Sokolov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,M. V. Stepanov论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. G. Tkachenko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,A. P. Shkurko论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,V. P. Chalyĭ论文数: 0 引用数: 0 h-index: 0机构: Svetlana-ROST Corporation,
- [8] AlN/GaN and AlGaN/GaN heterostructures grown by HVPE on SiC substrates[J]. NITRIDE SEMICONDUCTORS, 1998, 482 : 245 - 249Melnik, YV论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaNikolaev, AE论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaStepanov, SI论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaZubrilov, AS论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaNikitina, IP论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaVassilevski, KV论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaTsvetkov, DV论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaBabanin, AI论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaMusikhin, YG论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaTretyakov, VV论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, RussiaDmitriev, VA论文数: 0 引用数: 0 h-index: 0机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
- [9] Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE[J]. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2688 - 2691Aleksandrov, SB论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaBaranov, DA论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaChaly, VP论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaKrasovitsky, DM论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaPavlenko, MV论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaPetrov, SI论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaPogorelsky, YV论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaSokolov, IA论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaSokolov, MA论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaVelikovsky, LE论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaPodolskaya, NI论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaBulashevich, KA论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, RussiaKarpov, SY论文数: 0 引用数: 0 h-index: 0机构: ATC Semicond Technol & Equipment, St Petersburg 194156, Russia ATC Semicond Technol & Equipment, St Petersburg 194156, Russia
- [10] AlN/AlGaN/GaN/AlGaN multilayer heterostructures with quantum well channel on heat conducting substrates for power microwave transistors[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S956 - S959Krasovitskiy, Dmitry论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaAlexeev, Alexey论文数: 0 引用数: 0 h-index: 0机构: SemiTEq GmbH, D-30625 Hannover, Germany JSC, 27 Engels ave, St Petersburg 194156, RussiaByrnaz, Anton论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaKokin, Sergey论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaPavlenko, Maxim论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaPetrov, Stanislav论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaPogorelsky, Michael论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaPogorelsky, Yury论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaSokolov, Igor论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaSokolov, Michael论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaShkurko, Alexey论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, RussiaChaly, Victor论文数: 0 引用数: 0 h-index: 0机构: JSC, 27 Engels ave, St Petersburg 194156, Russia JSC, 27 Engels ave, St Petersburg 194156, Russia