Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates

被引：7

作者：

Alekseev, A. N. ^{[1
]}

Aleksandrov, S. B. ^{[1
]}

Byrnaz, A. E. ^{[1
]}

Velikovskii, L. E. ^{[1
]}

Velikovskii, I. E. ^{[1
]}

Krasovitskii, D. M. ^{[1
]}

Pavlenko, M. V. ^{[1
]}

Petrov, S. I. ^{[1
]}

Pogorel'skii, M. Yu. ^{[1
]}

Pogorel'skii, Yu. V. ^{[1
]}

Sokolov, I. A. ^{[1
]}

Sokolov, M. A. ^{[1
]}

Stepanov, M. V. ^{[1
]}

Tkachenko, A. G. ^{[1
]}

Shkurko, A. P. ^{[1
]}

Chalyi, V. P. ^{[1
]}

机构：

[1] Svetlana ROST Corp, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2008年 / 34卷 / 04期

关键词：

D O I：

10.1134/S1063785008040093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report preliminary results on the transfer of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures to silicon substrates. Optimization of the growth conditions allowed the number of macroscopic cracks in the epilayers to be reduced and ensured the growth of heterostructures with two-dimensional electron gas, which are suitable for the creation of field-effect transistors. The saturation current of prototype devices based on the heterostructures grown on silicon substrates are comparable with the analogous parameter of devices grown on sapphire and exhibits no decrease related to thermal scattering at high bias voltages.

引用

页码：300 / 302

页数：3

共 50 条

[1] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates
A. N. Alekseev
S. B. Aleksandrov
A. É. Byrnaz
L. É. Velikovskiĭ
I. É. Velikovskiĭ
D. M. Krasovitskiĭ
M. V. Pavlenko
S. I. Petrov
M. Yu. Pogorel’skiĭ
Yu. V. Pogorel’skiĭ
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
A. G. Tkachenko
A. P. Shkurko
V. P. Chalyĭ
[J]. Technical Physics Letters, 2008, 34 : 300 - 302
[2] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates
A. N. Alekseev
S. B. Aleksandrov
A. É. Byrnaz
S. V. Kokin
D. M. Krasovitskiĭ
M. V. Pavlenko
S. I. Petrov
M. Yu. Pogorel’skiĭ
Yu. V. Pogorel’skiĭ
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
A. G. Tkachenko
V. P. Chalyĭ
A. P. Shkurko
[J]. Technical Physics Letters, 2008, 34 : 711 - 713
[3] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates
Alekseev, A. N.
Aleksandrov, S. B.
Byrnaz, A. E.
Kokin, S. V.
Krasovitskii, D. M.
Pavlenko, M. V.
Petrov, S. I.
Pogorel'skii, M. Yu.
Pogorel'skii, Yu. V.
Sokolov, I. A.
Sokolov, M. A.
Stepanov, M. V.
Tkachenko, A. G.
Chalyi, V. P.
Shkurko, A. P.
[J]. TECHNICAL PHYSICS LETTERS, 2008, 34 (08) : 711 - 713
[4] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE
A. N. Alekseev
S. B. Aleksandrov
A. É. Byrnaz
L. É. Velikovskii
I. É. Velikovskii
D. M. Krasovitskii
M. V. Pavlenko
S. I. Petrov
Yu. V. Pogorel’skii
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
A. G. Tkachenko
A. P. Shkurko
V. P. Chalyi
[J]. Technical Physics Letters, 2005, 31 : 864 - 867
[5] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE
Alekseev, AN
Aleksandrov, SB
Byrnaz, AÉ
Velikovskii, LÉ
Velikovskii, IÉ
Krasovitskii, DM
Pavlenko, MV
Petrov, SI
Pogorel'skii, YV
Sokolov, IA
Sokolov, MA
Stepanov, MV
Tkachenko, AG
Shkurko, AP
Chalyi, VP
[J]. TECHNICAL PHYSICS LETTERS, 2005, 31 (10) : 864 - 867
[6] Multilayer AlN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE
Alekseev, A. N.
Aleksandrov, S. B.
Byrnaz, A. E.
Velikovskii, L. E.
Velikovskii, I. E.
Veretekha, A. V.
Krasovitskii, D. M.
Pavlenko, M. V.
Petrov, S. I.
Pogorel'skii, M. Yu.
Pogorel'skii, Yu. V.
Sokolov, I. A.
Sokolov, M. A.
Stepanov, M. V.
Tkachenko, A. G.
Shkurko, A. P.
Chalyi, V. P.
[J]. TECHNICAL PHYSICS LETTERS, 2006, 32 (11) : 960 - 963
[7] Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE
A. N. Alekseev
S. B. Aleksandrov
A. É. Byrnaz
L. É. Velikovskiĭ
I. É. Velikovskiĭ
A. V. Veretekha
D. M. Krasovitskiĭ
M. V. Pavlenko
S. I. Petrov
M. Yu. Pogorel’skiĭ
Yu. V. Pogorel’skiĭ
I. A. Sokolov
M. A. Sokolov
M. V. Stepanov
A. G. Tkachenko
A. P. Shkurko
V. P. Chalyĭ
[J]. Technical Physics Letters, 2006, 32 : 960 - 963
[8] Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE
Aleksandrov, SB
Baranov, DA
Chaly, VP
Krasovitsky, DM
Pavlenko, MV
Petrov, SI
Pogorelsky, YV
Sokolov, IA
Sokolov, MA
Velikovsky, LE
Podolskaya, NI
Bulashevich, KA
Karpov, SY
[J]. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2688 - 2691
[9] AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance
Visalli, Domenica
Van Hove, Marleen
Derluyn, Joff
Degroote, Stefan
Leys, Maarten
Cheng, Kai
Germain, Marianne
Borghs, Gustaaf
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[10] AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
Interuniversity Microelectronics Center , Kapeldreef 75, B-3000, Leuven, Belgium
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不详
[J]. Jpn. J. Appl. Phys., 4 PART 2

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