AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance

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Interuniversity Microelectronics Center , Kapeldreef 75, B-3000, Leuven, Belgium [1 ]
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Jpn. J. Appl. Phys. | / 4 PART 2卷
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Compilation and indexing terms; Copyright 2024 Elsevier Inc;
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04C101
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摘要：
Junction gate field effect transistors - III-V semiconductors - Silicon - Heterojunctions - Heterojunction bipolar transistors - Electric breakdown - Gallium nitride - Substrates
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