High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

被引:24
|
作者
Visalli, Domenica [1 ]
Van Hove, Marleen [1 ]
Derluyn, Joff [1 ]
Cheng, Kai [1 ]
Degroote, Stefan [1 ]
Leys, Maarten [1 ]
Germain, Marianne [1 ]
Borghs, Gustaaf [1 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
关键词
FIELD-EFFECT TRANSISTORS;
D O I
10.1002/pssc.200880835
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report high breakdown combined with low on-resistance results on AlGaN/GaN/AlGaN double heterostructure devices (DHFET) grown on 4 inch Silicon substrates. On two fingers devices with gate-drain distance (L-GD) of 8 mu m we measured a breakdown voltage (V-BD) of 650 V and an on-resistance (R-on) of 7.2 Omega.mm. We also demonstrated that increasing the buffer thickness and etching deep into the AlGaN buffer layer improve both buffer and device breakdown. Moreover, we have also achieved a high breakdown voltage (580 V) for smaller LGD (5 mu m) combined with the lowest reported on-resistance (6 Omega.mm) for this voltage range. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:S988 / S991
页数:4
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